creat by art - patented trench schottky technology - excellent high temperature stability - low forward voltage - low power loss/ high efficiency - high forward surge capability packing code with suffix "g" means green compound (halogen-free) terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 2 whisker test symbol unit v rrm v dv/dt v/ s i f = 10a i f = 20a i f = 10a i f = 20a t j = 25c a t j = 125c ma r jc c/w t j c t stg c document number: ds_d1412012 version: c14 TST20U45C thru tst20u60c 20 10 300 22.4 60 - 55 to +150 - 55 to +150 a note 1: pulse test with pulse width = 300 s, 1% duty cycle voltage rate of change (rated vr) peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode 10000 60 maximum instantaneous reverse current per diode at rated reverse voltage i r operating junction temperature range typical thermal resistance per diode storage temperature range maximum ratings and electrical characteristics (t a = 25c unless otherwise noted) i f(av) TST20U45C i fsm mounting torque: 0.56 nm max. weight: 1.88g (approximately) v mechanical data trench schottky rectifier - halogen-free according to iec 61249-2-21 definition features maximum repetitive peak reverse voltage trench schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board dc/dc converters. tst20u60c 45 polarity: as marked taiwan semiconductor a - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec per device case: to-220ab molding compound meets ul 94 v-0 flammability rating per diode maximum average forward rectified current to-220ab typical applications v f parameter t j = 125c instantaneous forward voltage per diode ( note 1 ) 0.55 0.44 0.60 0.53 - t j = 25c 0.39 - - 0.61 0.48 0.63 0.54 - 0.43 - - max. typ. max. typ. 120
. document number: ds_d1412012 version: c14 TST20U45C thru tst20u60c taiwan semiconductor (t a = 25c unless otherwise noted) ordering information note 1: "xx" defines voltage from 45v (TST20U45C) to 60v (tst20u60c) preferred part no. part no. ratings and characteristics curves tst20u60c c0g green compound description packing code packing code suffix example tst20u60c c0 g c0 packing code tst20uxxc (note 1) part no. 50 / tube packing to-220ab package g packing code suffix 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 t j =25 o c t j =100 o c t j =125 o c tsf20u45c t j =150 o c percent of rated peak reverse voltage (%) instantaneous reverse current (ma) fig. 4 typical reverse characteristics 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 t j =25 o c t j =125 o c t j =150 o c t j =100 o c fig. 2 typical forward characteristics tsf20u45c instantaneous forward current (a) forward voltage (v) 0 5 10 15 20 25 30 0 25 50 75 100 125 150 with heatsink 3in x 5in x 0.25in al-plate fig.1 forward current derating curve average forward current (a) case temperature ( o c) tst20u60c TST20U45C 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 fig. 3 typical forward characteristics tsf20u60c instantaneous forward current (a) t j =25 o c t j =125 o c t j =150 o c t j =100 o c forward voltage (v)
document number: ds_d1412012 version: c14 TST20U45C thru tst20u60c taiwan semiconductor 100 1000 10000 0.10 1.00 10.00 100.00 f=1.0mhz vslg=50mvp-p capacitance (pf) reverse voltage (v) fig. 6 typical junction capacitance tst20u60c TST20U45C 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 tsf20u60c t j =25 o c t j =100 o c t j =125 o c t j =150 o c instantaneous reverse current (ma) fig. 5 typical reverse characteristics percent of rated peak reverse voltage (%)
package outline dimensions min max min max a - 10.50 - 0.413 b 2.62 3.44 0.103 0.135 c 2.80 4.20 0.110 0.165 d 0.68 0.94 0.027 0.037 e 3.54 4.00 0.139 0.157 f 14.60 16.00 0.575 0.630 g 13.19 14.79 0.519 0.582 h 2.41 2.67 0.095 0.105 i 4.42 4.76 0.174 0.187 j 1.14 1.40 0.045 0.055 k 5.84 6.86 0.230 0.270 l 2.20 2.80 0.087 0.110 m 0.35 0.64 0.014 0.025 n 1.14 1.77 0.045 0.070 p/n = specific device code g =green compound yww = date code f = factory code document number: ds_d1412012 marking diagram version: c14 TST20U45C thru tst20u60c taiwan semiconductor to-220ab dim. unit (mm) unit (inch)
creat by art assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1412012 version: c14 TST20U45C thru tst20u60c taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,
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